Authors: S. Trovarello (UniBO), D. Masotti (UniBO), A. Costanzo (UniBO)

Title: Design of a 24-GHz dual-polarized rectenna integrated on silicon

Abstract: This paper presents the analysis and design of on-Silicon dielectric resonator antennas (DRAs) for energy harvesting applications. The proposed antennas, operating at 24 GHz and excited through a simple microstrip line, are built on a high-resistivity silicon substrate 0.525 mm-thick. The design of cylindrical and rectangular resonators using sapphire as dielectric material is first described, leading to 80% of maximum radiation efficiency and gain equal to 5.15 dBi. Given the increasing attention to system-on-a-chip (SoC) circuits, the second study proposed in this paper aims to a complete integrated solution, describing all-Silicon DRAs, both in cylindrical and rectangular shapes. Very promising performances are obtained in this case, too, from the twofold point of view of compactness and efficiency (75% radiation efficiency and gain equal to 4.72 dBi), if compared to standard solutions on Silicon. As a last step of the proposed study, an investigation on the miniaturization of DRAs operating at millimeter waves is described, exploiting high permittivity materials. In particular, a resonator with dielectric permittivity of 50, is analyzed.

Published in: 2021 International Semiconductor Conference (CAS)

Date of Conference: 6th to the 8th of October 2021

Link to Publication